Automotive 750V EDT2 IGBTs in TO247PLUS Package designed for Discrete Traction Inverters
![Automotive 750V EDT2 IGBTs](/sites/default/files/components/EDT2-IGBT-750V-TO247.jpg)
英飞凌科技公司已经推出了新的EDT2IGBTs in a TO247PLUS package that are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. With the automotive micro-pattern trench-field-stop cell design, these IGBTs meet and exceed the industry standard AECQ101 for automotive components. The newAIKQ120N75CP2andAIKQ200N75CP2feature EDT2 technology which is optimized for traction inverter and has a breakdown voltage of 750 V, supporting battery voltages up to 470 V DC, and significantly lower switching and conduction losses.
The rated currents of the discrete EDT2 IGBTs are 120 A and 200 A at 100°C, each with a very low forward voltage, reducing conduction losses by up to 13 percent compared to the previous generation. These EDT2 IGBTs feature an extremely narrow parameter distribution. The collector-emitter saturation voltage (V ce(sat)) difference between typical and maximum values is less than 200 mV and the gate threshold voltage (V GEth) difference is less than 750 mV. Moreover, the TO247PLUS package offers a greater creepage distance for easy design-in.
Features
VCE = 750 V
750 V collector-emitter blocking voltage capability
Smooth switching characteristics
Very low VCE(sat),1.30 V (typ.)
Short circuit robust
Very tight parameter distribution
Low gate charge QG
Co-packaged with fast soft recovery Emitter Controlled 3 diode
Qualified according to AEC-Q101
Increase overvoltage margin in the application
Reduction of number of paralleled devices required
Simple gate drive design
Applications
Traction inverter
DC Link Discharge Switch
Auxiliary inverter