2N2219 NPN晶体管

2018年6月21日 - 0评论

2N2219 NPN晶体管

2N2219 Transistor Pinout

2N2219引脚配置

PIN码	PIN名称	描述
1	发射器	电流通过发射器排出，通常连接到地面
2	根据	控制晶体管的偏置，用于打开或关闭晶体管
3.	Collector	电流通过收集器流入，通常连接到负载

特征

小信号NPN晶体管
当前增益（H_Fe.），通常为50个小信号
连续收集器电流（I_C) is 800mA
集电极 - 发射极电压（V_CEO) is 50 V
Collector-Base voltage (V_CB.0）是75V.
发射极基电压（V._BE0.) is 6V
打开时间是40ns
关闭时间是250ns
可用于-92包

笔记：完整的技术细节可以在其中找到2N2219数据表given at the end of this page.

替代NPN晶体管

BC549那B.C636,BC639.那BC547.那2N2369,2N3055那2N3904那2N3906那2SC5200.那2N5551.

2n2219等效晶体管

2N2905

2N2219晶体管的简要说明

2N2219是A.NPN晶体管因此，当基销保持在地面时，收集器和发射器将留下打开（反向偏置）并且当向基本销提供信号时将被关闭（正向偏置）。2N2219有A.获得价值H_Fe.50分;该值确定晶体管的放大容量。可以通过收集器引脚流过的最大电流量为800mA，因此我们无法使用该晶体管连接超过800mA的负载。偏置晶体管，我们必须向基本销提供电流，这是电流（i_B.）通过使用晶体管向基本销限制为5mA。

When this transistor is fully biased then it can allow a maximum of 800mA to flow across the collector and emitter. This stage is calledSaturation Region。当缩小基电流时，晶体管变得完全关闭，此阶段称为Cut-off Region并且基础发射极电压约为600 mV。

Where to use 2N2219 Transistor

2N2219晶体管非常类似于常用的晶体管NPN晶体管2n2222。但它有金属可以包装，可以在电压上略高于2n2222可以处理的电压。总的来，它只是另一个小信号晶体管，它通常用于开关和放大电路。

因此，如果您正在寻找可以切换负载或体面放大的NPN晶体管，那么2N2219可能是您项目的正确选择。

如何使用2n2219作为开关

The 2N2219 is a NPN transistor and is normally used as a switch in many circuits. So let’s discuss how to use one in a circuit. Since transistor is of NPN the load to be switched should be connected to the collector and the emitter should be connected to the ground as show in the figure below.

2N2219 Transistor Switch Circuit

另一个重要的事情要记住,而using a transistor as switch is the base resistor. This resistor is connected to the base pin of the transistor to limit the current flowing through the base. As we know the transistor is a current controlled device meaning, we have pass some current (I_B.) thorough the base of the transistor to turn it on. The value of this current can be calculated by the required amount of current that will be consumed by the load. Here lets us assume the load here consumes around 800mA maximum so our collector current (I_C）800mA。使此电流通过晶体管流过晶体管的基本电流I的值_B.can be calculated using the below formula:

一世_B.= I._C/ H_Fe.

其中H._Fe，is the current gain of the transistor which in our case is 50. In some cases the current gain will also be represented using the symbol β.

一世n our case for a collector current of 800mA we have to pass a base current of 16mA. So to calculate the resistor value of the base we can use the formulae